Then, by using the Fermi Golden Rule, transition rates between different subbands of quantum wells are described.
The developed theory is applied to some GaAs-AlGaAs quantum wells and the results are physically interpreted. Finally, the possibility of creating the population inversion for the laser action in an asymmetric step quantum well is briefly studied.
Published in: ICM Proceedings of the 12th International Conference on Microelectronics. IEEE Cat. Intersubband Transitions In Quantum Structures.
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Roberto Paiella. Chapter 2 Terahertz Quantum Cascade Lasers. Chapter 8 Intersubband Transitions in Quantum Dots. Hutchinson A. Cho active region all-optical Appl bias calculated Capasso carrier coherent conduction band coupling current density D.
Nano-imaging of intersubband transitions in few-layer 2-D materials
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Kohler, A. Tredicucci, F.
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Rossi, "Terahertz semiconductor-heterostructure laser", Nature , , Xie, P. Chen, A. These shifts are much stronger than those of the bound states inside the well and a model is proposed to explain the shifts of the continuum and bound levels using perturbation theory. To further increase the localization of the above the barrier states a two mono layers of AlAs barriers were added in each side of the ACQW. In addition, an electrical contacts were realized on the structure and we were able to study the effect of external applied electric fields on the different energy states in the sample.
Intersubband Transitions In Quantum Structures
We found that the energy peak of the PL spectra were blue shifted and the line shapes narrowed considerably under the applied bias. These changes are linked to the depletion of the 2 dimensional electron gas 2DEG which initially occupied the ground state in the WQW. The resonant Raman spectroscopy of this structure revealed an above the barrier state which was resolved only by the Raman spectra of the ACQW phonons and was blue shifted more than the states bound inside the QWs, indicating that this state is highly localized in the ACQW region.
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