Intersubband Transitions In Quantum Structures


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Then, by using the Fermi Golden Rule, transition rates between different subbands of quantum wells are described.

The developed theory is applied to some GaAs-AlGaAs quantum wells and the results are physically interpreted. Finally, the possibility of creating the population inversion for the laser action in an asymmetric step quantum well is briefly studied.

Published in: ICM Proceedings of the 12th International Conference on Microelectronics. IEEE Cat. Intersubband Transitions In Quantum Structures.


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Roberto Paiella. Chapter 2 Terahertz Quantum Cascade Lasers. Chapter 8 Intersubband Transitions in Quantum Dots. Hutchinson A. Cho active region all-optical Appl bias calculated Capasso carrier coherent conduction band coupling current density D.

Nano-imaging of intersubband transitions in few-layer 2-D materials

Sivco density matrix detector devices dipole doped drive field efficiency electric field emission energy levels excitation Faist femtosecond Figure frequency GaAs gain Gmachl H. Liu heterostructure IEEE InGaAs injection injector interband intersubband absorption intersubband transitions ISBTs lasing layers Lett lifetime light material system matrix elements measured mid-infrared miniband mode modulation nonlinear optical operation optical nonlinearities oscillations output power peak photodetectors photon Phys polarization population inversion pulse pump QC lasers QCLs quantum cascade lasers quantum dots Quantum Electron QWIP radiation Raman refractive index relaxation resonant sample scattering semiconductor shown in Fig SiGe signal Sirtori spectra spectrum Stokes structure subband substrate temperature terahertz terahertz radiation threshold ultrafast valence band waveguide wavelength width.

Kohler, A. Tredicucci, F.


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Rossi, "Terahertz semiconductor-heterostructure laser", Nature , , Xie, P. Chen, A. These shifts are much stronger than those of the bound states inside the well and a model is proposed to explain the shifts of the continuum and bound levels using perturbation theory. To further increase the localization of the above the barrier states a two mono layers of AlAs barriers were added in each side of the ACQW. In addition, an electrical contacts were realized on the structure and we were able to study the effect of external applied electric fields on the different energy states in the sample.

Intersubband Transitions In Quantum Structures

We found that the energy peak of the PL spectra were blue shifted and the line shapes narrowed considerably under the applied bias. These changes are linked to the depletion of the 2 dimensional electron gas 2DEG which initially occupied the ground state in the WQW. The resonant Raman spectroscopy of this structure revealed an above the barrier state which was resolved only by the Raman spectra of the ACQW phonons and was blue shifted more than the states bound inside the QWs, indicating that this state is highly localized in the ACQW region.

Intersubband Transitions In Quantum Structures Intersubband Transitions In Quantum Structures
Intersubband Transitions In Quantum Structures Intersubband Transitions In Quantum Structures
Intersubband Transitions In Quantum Structures Intersubband Transitions In Quantum Structures
Intersubband Transitions In Quantum Structures Intersubband Transitions In Quantum Structures
Intersubband Transitions In Quantum Structures Intersubband Transitions In Quantum Structures
Intersubband Transitions In Quantum Structures Intersubband Transitions In Quantum Structures
Intersubband Transitions In Quantum Structures Intersubband Transitions In Quantum Structures

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